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| Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. Document Number: MRF6S18060 Rev. 2, 5/2006 RF Power Field Effect Transistors MRF6S18060MR1 MRF6S18060MBR1 1800 - 2000 MHz, 60 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application * Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain -- 15 dB Drain Efficiency - 50% GSM EDGE Application * Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA, Pout = 25 Watts Avg., Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain -- 15.5 dB Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 76 dBc EVM -- 2% rms * Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * 200C Capable Plastic Package * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain- Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, +12 216 1.2 - 65 to +175 200 Unit Vdc Vdc W W/C C C ARCHIVE INFORMATION CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S18060MR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S18060MBR1 Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 60 W CW Case Temperature 77C, 25 W CW Symbol RJC Value (1) 0.81 0.95 Unit C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S18060MR1 MRF6S18060MBR1 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.5 -- pF VGS(th) VGS(Q) VDS(on) gfs 1 2 -- -- 2 2.8 0.24 5.3 3 4 -- -- Vdc Vdc Vdc S Symbol IDSS IDSS IGSS Min -- -- -- Typ -- -- -- Max 10 1 1 Unit Adc Adc Adc ARCHIVE INFORMATION Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 W, f = 1930 MHz, f = 1990 MHz Gps 14 15 17 dB Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point 1. Part is internally matched both on input and output. D IRL P1dB 48 -- 60 50 - 12 65 -- -9 -- % dB W (continued) MRF6S18060MR1 MRF6S18060MBR1 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale Broadband Test Fixture, 50 hm system) VDD = 26 Vdc, IDQ = 450 mA, Pout = 25 W Avg., 1805 MHz Input Return Loss Pout @ 1 dB Compression Point, CW MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 3 ARCHIVE INFORMATION VBIAS R1 R2 C1 Z6 Z13 R3 RF INPUT Z8 Z1 C3 Z2 Z3 C5 C6 Z4 Z5 Z7 C8 DUT Z9 Z10 C7 Z11 C4 C2 C9 C10 + C11 VSUPPLY Z12 RF OUTPUT ARCHIVE INFORMATION * Variable for tuning Figure 1. MRF6S18060MR1(MBR1) Test Circuit Schematic -- 1900 MHz Table 6. MRF6S18060MR1(MBR1) Test Circuit Component Designations and Values -- 1900 MHz Part C1, C2, C3, C4 C5 C6 C7, C8 C9, C10 C11 R1, R2 R3 Description 6.8 pF 100B Chip Capacitors 1.5 pF 100B Chip Capacitor 1.8 pF 100B Chip Capacitor 1 pF 100B Chip Capacitors 10 F Chip Capacitors (2220) 220 F, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors (1206) 10 W, 1/4 W Chip Resistor (1206) Part Number 100B6R8CW 100B1R5BW 100B1R8BW 100B1R0BW C5750X5R1H106MT 13668221 Manufacturer ATC ATC ATC ATC TDK Philips MRF6S18060MR1 MRF6S18060MBR1 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Z1 Z2* Z3* Z4* Z5 Z6 Z7, Z8 0.250 x 0.083 Microstrip 0.950 x 0.083 Microstrip 0.250 x 0.083 Microstrip 0.315 x 0.083 Microstrip 0.365 x 1.000 Microstrip 0.680 x 0.080 Microstrip 0.115 x 1.000 Microstrip Z9 Z10* Z11* Z12 Z13 PCB 0.485 x 1.000 Microstrip 0.500 x 0.083 Microstrip 0.895 x 0.083 Microstrip 0.250 x 0.083 Microstrip 0.200 x 0.080 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55 C11 VGS R1 R2 C1 C2 C9 R3 C5 CUT OUT AREA C7 C10 VDS C3 C6 C8 C4 ARCHIVE INFORMATION MRF6S18060N/NB Rev. 0 Figure 2. MRF6S18060MR1(MBR1) Test Circuit Component Layout -- 1900 MHz MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION TYPICAL CHARACTERISTICS -- 1900 MHz 18 57 55 0 IRL, INPUT RETURN LOSS (dB) 16 Gps 15 IRL 14 VDD = 26 Vdc IDQ = 600 mA 53 D, DRAIN EFFICIENCY (%) 17 Gps, POWER GAIN (dB) D -5 -10 51 -15 49 -20 ARCHIVE INFORMATION f, FREQUENCY (MHz) Figure 3. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 60 Watts 18 42 40 0 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) D D, DRAIN EFFICIENCY (%) 17 -5 16 Gps 15 IRL VDD = 26 Vdc IDQ = 600 mA 13 1900 1920 1940 1960 1980 2000 38 -10 36 -15 14 34 -20 32 2020 -25 f, FREQUENCY (MHz) Figure 4. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 30 Watts 17 IDQ = 900 mA Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 16 750 mA 600 mA 15 450 mA 14 300 mA 13 VDD = 26 Vdc f = 1960 MHz 12 1 10 Pout, OUTPUT POWER (WATTS) 100 17 IDQ = 600 mA f = 1960 MHz 16 15 VDD = 32 V 14 26 V 13 12 V 12 0 20 40 60 80 100 Pout, OUTPUT POWER (WATTS) CW 16 V 20 V 24 V Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power MRF6S18060MR1 MRF6S18060MBR1 6 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 13 1900 1920 1940 1960 1980 2000 47 2020 -25 TYPICAL CHARACTERISTICS -- 1900 MHz 17 16 Gps, POWER GAIN (dB) 15 85_C 14 13 12 11 10 VDD = 26 Vdc IDQ = 600 mA f = 1960 MHz 1 10 Pout, OUTPUT POWER (WATTS) CW D 85_C 40 30 20 10 0 100 TC = -30_C 25_C 50 Gps 25_C -30_C 60 D, DRAIN EFFICIENCY (%) 70 EVM, ERROR VECTOR MAGNITUDE (% rms) 4 3.5 3 2.5 25 W Avg. 2 1.5 1 1900 10 W Avg. VDD = 26 Vdc IDQ = 450 mA Pout = 35 W Avg. ARCHIVE INFORMATION f, FREQUENCY (MHz) Figure 7. Power Gain and Drain Efficiency versus CW Output Power SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) Figure 8. Error Vector Magnitude versus Frequency EVM, ERROR VECTOR MAGNITUDE (% rms) 12 10 8 D 6 85_C 4 -30_C 2 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. EVM 25_C VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz TC = -30_C, 25_C 60 50 85_C 40 30 20 10 0 100 D, DRAIN EFFICIENCY (%) -55 SR 400 kHz -60 25 W Avg. Pout = 35 W Avg. -65 10 W Avg. VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz SR 600 kHz 35 W Avg. 25 W Avg. 10 W Avg. -70 -75 -80 1920 1940 1960 1980 2000 f, FREQUENCY (MHz) Figure 9. Error Vector Magnitude and Drain Efficiency versus Output Power Figure 10. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency -45 SPECTRAL REGROWTH @ 400 kHz (dBc) -50 -55 -60 -65 25_C -70 -75 0 10 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) AVG. 85_C TC = -30_C VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz SPECTRAL REGROWTH @ 600 kHz (dBc) -55 -60 -65 25_C -70 -30_C -75 -80 -85 0 10 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) AVG. VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz TC = 85_C Figure 11. Spectral Regrowth at 400 kHz versus Output Power Figure 12. Spectral Regrowth at 600 kHz versus Output Power MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION 1920 1940 1960 1980 2000 2020 TYPICAL CHARACTERISTICS 1.E+09 MTTF FACTOR (HOURS X AMPS2) 1.E+08 1.E+07 1.E+06 ARCHIVE INFORMATION TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature MRF6S18060MR1 MRF6S18060MBR1 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 90 100 110 120 130 140 150 160 170 180 190 200 210 Zo = 10 f = 1930 MHz Zsource ARCHIVE INFORMATION f = 1990 MHz f = 1930 MHz f = 1990 MHz Zload VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 W CW f MHz 1930 1960 1990 Zsource 8.00 - j6.48 7.57 - j6.82 7.06 - j7.06 Zload 2.83 - j5.13 2.63 - j4.84 2.44 - j4.54 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 14. Series Equivalent Source and Load Impedance -- 1900 MHz MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION VBIAS R1 R2 C1 Z6 C2 C10 C11 + C12 VSUPPLY Z14 R3 RF INPUT Z8 C6 Z1 C3 Z2 Z3 C5 C7 Z4 Z5 Z7 C8 DUT C9 C4 Z9 Z10 Z11 Z12 Z13 RF OUTPUT ARCHIVE INFORMATION * Variable for tuning Figure 15. MRF6S18060MR1(MBR1) Test Circuit Schematic -- 1800 MHz Table 7. MRF6S18060MR1(MBR1) Test Circuit Component Designations and Values -- 1800 MHz Part C1, C2, C3, C4 C5 C6, C9 C7 C8 C10, C11 C12 R1, R2 R3 Description 6.8 pF 100B Chip Capacitors 0.8 pF 600B Chip Capacitor 0.5 pF 600B Chip Capacitors 2.2 pF 200B Chip Capacitor 1.5 pF 600B Chip Capacitor 10 F Chip Capacitors (2220) 220 F, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors (1206) 10 W, 1/4 W Chip Resistor (1206) Part Number 100B6R8CW 600B0R8BW 600B0R5BW 200B2R2BW 600B1R5BW C5750X5R1H106MT 13668221 Manufacturer ATC ATC ATC ATC ATC TDK Philips MRF6S18060MR1 MRF6S18060MBR1 10 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Z1 Z2* Z3* Z4* Z5 Z6 Z7, Z8 0.250 x 0.083 Microstrip 0.320 x 0.083 Microstrip 0.660 x 0.083 Microstrip 0.535 x 0.083 Microstrip 0.365 x 1.000 Microstrip 0.860 x 0.080 Microstrip 0.115 x 1.000 Microstrip Z9 Z10* Z11* Z12* Z13 Z14 PCB 0.485 x 1.000 Microstrip 0.420 x 0.083 Microstrip 0.230 x 0.083 Microstrip 0.745 x 0.083 Microstrip 0.250 x 0.083 Microstrip 0.640 x 0.080 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55 VGS R1 R2 C1 C2 C10 R3 C6 CUT OUT AREA C12 VDS C11 C3 C5 C7 C8 C9 C4 ARCHIVE INFORMATION MRF6S18060N/NB Rev. 0 Figure 16. MRF6S18060MR1(MBR1) Test Circuit Component Layout -- 1800 MHz MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 11 ARCHIVE INFORMATION TYPICAL CHARACTERISTICS -- 1800 MHz 17 D D, DRAIN EFFICIENCY (%) 16 Gps, POWER GAIN (dB) Gps 55 -4 IRL, INPUT RETURN LOSS (dB) 57 0 15 53 -8 14 IRL VDD = 26 Vdc IDQ = 600 mA 12 1780 1800 1820 1840 1860 1880 1900 51 -12 13 49 47 1920 -16 -20 ARCHIVE INFORMATION f, FREQUENCY (MHz) Figure 17. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 60 Watts 17 Gps 43 0 -4 IRL, INPUT RETURN LOSS (dB) 15 D 39 D, DRAIN EFFICIENCY (%) 16 Gps, POWER GAIN (dB) 41 -8 14 IRL VDD = 26 Vdc IDQ = 600 mA 12 1760 1780 1800 1820 1840 1860 1880 1900 37 -12 13 35 33 1920 -16 -20 f, FREQUENCY (MHz) Figure 18. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 30 Watts EVM, ERROR VECTOR MAGNITUDE (% rms) EVM, ERROR VECTOR MAGNITUDE (% rms) 4.5 4 Pout = 35 W Avg. 3.5 3 2.5 2 25 W Avg. 1.5 1 0.5 1780 1800 15 W Avg. VDD = 26 Vdc IDQ = 450 mA 10 VDD = 26 Vdc IDQ = 450 mA f = 1860 MHz D 6 50 30 4 TC = 25_C 20 2 0 1 EVM 10 0 100 1820 1840 1860 1880 1900 1920 f, FREQUENCY (MHz) 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 19. Error Vector Magnitude versus Frequency MRF6S18060MR1 MRF6S18060MBR1 12 Figure 20. Error Vector Magnitude and Drain Efficiency versus Output Power RF Device Data Freescale Semiconductor D, DRAIN EFFICIENCY (%) 8 40 ARCHIVE INFORMATION TYPICAL CHARACTERISTICS -- 1800 MHz SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) -50 Pout = 35 W Avg. -55 -60 25 W Avg. -65 15 W Avg. -70 35 W Avg. -75 -80 1780 25 W Avg. 10 W Avg. SR 400 kHz VDD = 26 Vdc IDQ = 450 mA SR 600 kHz ARCHIVE INFORMATION 1800 1820 1840 1860 1880 1900 1920 f, FREQUENCY (MHz) Figure 21. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency -45 SPECTRAL REGROWTH @ 400 kHz (dBc) -50 TC = 25_C -55 -60 -65 -70 -75 0 10 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) AVG. VDD = 26 Vdc IDQ = 450 mA f = 1860 MHz SPECTRAL REGROWTH @ 600 kHz (dBc) -60 -65 TC = 25_C -70 -75 VDD = 26 Vdc IDQ = 450 mA f = 1860 MHz 0 10 20 30 40 50 60 -80 -85 Pout, OUTPUT POWER (WATTS) AVG. Figure 22. Spectral Regrowth at 400 kHz versus Output Power Figure 23. Spectral Regrowth at 600 kHz versus Output Power MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 13 ARCHIVE INFORMATION Zo = 10 ARCHIVE INFORMATION f = 1805 MHz Zload f = 1880 MHz f = 1805 MHz Zsource VDD = 26 Vdc, IDQ = 600 mA, Pout = 65 W CW f MHz 1805 1840 1880 Zsource 4.16 - j7.56 3.89 - j7.40 3.56 - j7.21 Zload 3.29 - j4.91 3.10 - j4.69 2.88 - j4.45 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 24. Series Equivalent Source and Load Impedance -- 1800 MHz MRF6S18060MR1 MRF6S18060MBR1 14 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION f = 1880 MHz NOTES MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 15 PACKAGE DIMENSIONS B E1 E3 2X A GATE LEAD DRAIN LEAD D1 4X D e b1 aaa M C A 4X D2 c1 H DATUM PLANE ZONE J 2X 2X E F A1 A2 E2 E5 E4 2X A NOTE 7 C SEATING PLANE PIN 5 NOTE 8 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 --- .551 .559 .353 .357 .132 .140 .124 .132 .270 --- .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 --- 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 --- 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 4 D3 3 MRF6S18060MR1 MRF6S18060MBR1 16 RF Device Data Freescale Semiconductor CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC CCCCCCC E5 BOTTOM VIEW 1 2 DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6S18060MR1 STYLE 1: PIN 1. 2. 3. 4. 5. MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 17 MRF6S18060MR1 MRF6S18060MBR1 18 RF Device Data Freescale Semiconductor MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp. MRF6S18060MR1 MRF6S18060MBR1 Rev. 20 2, 5/2006 Document Number: MRF6S18060 RF Device Data Freescale Semiconductor |
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